SSM3J353F Datasheet, Toshiba Semiconductor

(1) 4.0 V gate drive voltage. (2) Low drain-source on-resistance : RDS(ON) = 274 mΩ (max) (@VGS = -4.0 V, ID = -0.5 A) RDS(ON) = 232 mΩ (max) (@VGS = -4.5 V, ID = -0.5 A).

* Power Management Switches 2. Features (1) 4.0 V gate drive voltage. (2) Low drain-source on-resistance : RDS(ON) =.